IC device having low resistance TSV comprising ground connection
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United States of America Patent
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May 7, 2013
Grant Date -
Aug 2, 2012
app pub date -
Apr 11, 2012
filing date -
May 12, 2008
priority date (Note) -
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Abstract
A semiconductor device includes an integrated circuit (IC) die including a substrate, and a plurality of through substrate via (TSV) that extends through the substrate to a protruding integral tip and which is partially covered with a dielectric liner and partially exposed from the dielectric liner. A metal layer is on the bottom surface of the IC die physically connecting the plurality of TSVs and physically and electrically connected to connecting the first metal protruding tips of TSVs.
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