Circuits and methods for reducing electrical stress on a transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 7, 2013
Grant Date -
N/A
app pub date -
Jun 19, 2009
filing date -
Jun 24, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Embodiments of the present invention include an electronic circuit that reduces stress on a transistor. In one embodiment, the electronic circuit comprises a transistor and a reference generator circuit. The transistor may be a metal oxide semiconductor (MOS) transistor, for example. The MOS transistor has a gate terminal to receive an input voltage. The reference generator circuit selectively couples first and second reference voltages to a source terminal of the MOS transistor. The reference generator circuit senses the input voltage and provides the first reference voltage to the source terminal of the MOS transistor if the input voltage is greater than a threshold and the second reference voltage is coupled to the source terminal of the first MOS transistor if the input voltage is less than a threshold.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully