Memory and write control method
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United States of America Patent
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May 7, 2013
Grant Date -
Dec 30, 2010
app pub date -
Jun 8, 2010
filing date -
Jun 24, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
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