Reversible low-energy data storage in phase change memory

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United States of America

PATENT NO 8437182
SERIAL NO

12958502

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Abstract

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A phase change memory (PCM) device utilizes low energy pulses to write data to PCM storage elements (cells). Methods, devices and systems are described that use low energy reset pulses to reset cells that have been previously set using a method that keeps a portion of the PCM cells in an amorphous phase. The reset is reversible by utilizing a low energy set pulse.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kalb, Johannes A San Francisco, US 6 30
Klehn, Brett E Santa Clara, US 2 4

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