Non-volatile memory with both single and multiple level cells

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United States of America Patent

PATENT NO 8437186
APP PUB NO 20120257451A1
SERIAL NO

13494525

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Abstract

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Memory arrays and methods of operating such memory arrays are described as having a memory cell operated as a single level cell interposed between and coupled to a select gate and a memory cell operated as a multiple level memory cell. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of memory cells operated as single level memory cells and a number of memory cells operated as multiple level memory cells, where a first select gate is directly coupled to a first memory cell operated as a single level memory cell interposed between and coupled to the first select gate and a continuous number of memory cells operated as multiple level memory cells.

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Patent Owner(s)

Patent OwnerAddress
POLARAN HABERLESME TEKNOLOJILERI ANONIM SIRKETI06800 CANKAYA/ANKARA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Zhudong, TW 291 8244

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