Flash memory data recovery
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United States of America Patent
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May 7, 2013
Grant Date -
N/A
app pub date -
Jun 22, 2010
filing date -
Jul 15, 2009
priority date (Note) -
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Abstract
An apparatus and method for selectively controlling application of a data recovery bias voltage are described. One example apparatus includes replenish logic configured to selectively control application of a data recovery bias voltage to a control gate associated with a cell in a flash memory apparatus. The replenish logic may be configured to select the data recovery bias voltage to replenish charge lost from a floating gate in the flash memory apparatus. The replenish logic may also be configured to control application of the data recovery bias voltage for a period of time sufficient to charge a threshold voltage (Vt) in the cell. In one embodiment, the data recovery bias voltage is based on a program voltage employed to program a value into the cell.
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