Word-line level shift circuit

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United States of America Patent

PATENT NO 8437201
APP PUB NO 20120134221A1
SERIAL NO

13366804

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Abstract

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A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a restore input at the higher voltage, wherein the first and second transistors are coupled along a series path to a source at the higher voltage; a control node along the series path; an output node coupled to the control node via a first pair of parallel transistors; and a feedback circuit having a second pair of parallel transistors and a feedback transistor, wherein the feedback transistor couples the second pair of parallel transistors to the control node and is gated by the output node.

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Patent Owner(s)

Patent OwnerAddress
MARVELL ASIA PTE LTDSINGAPORE 369522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arsovski, Igor Williston, US 120 1401
Deming, Matthew W Essex Junction, US 2 15
Hill, Darryl R Colchester, US 2 15
Pilo, Harold Underhill, US 108 1284
Wistort, Reid A Westford, US 20 274

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