Abrasive compounds for semiconductor planarization
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United States of America Patent
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May 14, 2013
Grant Date -
Aug 5, 2010
app pub date -
Apr 16, 2010
filing date -
Aug 14, 2003
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Abstract
A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 μm or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 μm or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.
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