Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
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United States of America Patent
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May 14, 2013
Grant Date -
May 27, 2010
app pub date -
Jul 2, 2008
filing date -
Jul 6, 2007
priority date (Note) -
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Abstract
A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GalnO3 phase of a β-Ga2O3-type structure, or GalnO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.
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