Method of forming a field effect transistor
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United States of America Patent
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May 14, 2013
Grant Date -
Dec 18, 2008
app pub date -
Aug 13, 2008
filing date -
Aug 15, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
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