Structure and method for making metal semiconductor field effect transistor (MOSFET) with isolation last process
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United States of America Patent
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May 14, 2013
Grant Date -
Feb 2, 2012
app pub date -
Jul 27, 2010
filing date -
Jul 27, 2010
priority date (Note) -
Expired
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Abstract
In one embodiment, a method of providing a semiconductor device is provided, in which instead of forming isolation regions before the formation of the semiconductor devices, the isolation regions are formed after the semiconductor devices. In one embodiment, the method includes forming a semiconductor device on a semiconductor substrate. A placeholder dielectric is formed on a portion of a first surface of the substrate adjacent to the semiconductor device. A trench is etched into the substrate from a second surface of the substrate that is opposite the first surface of the substrate, wherein the trench terminates on the placeholder dielectric. The trench is filled with a dielectric material.
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