Forming a phase change memory with an ovonic threshold switch
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United States of America Patent
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May 14, 2013
Grant Date -
Aug 30, 2012
app pub date -
May 3, 2012
filing date -
Oct 28, 2005
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Abstract
A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
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