ADSORPTION SITE BLOCKING METHOD FOR CO-DOPING ALD FILMS
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United States of America Patent
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May 14, 2013
Grant Date -
May 16, 2013
app pub date -
Nov 11, 2011
filing date -
Nov 11, 2011
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Abstract
A method for doping a dielectric material by pulsing a first dopant precursor, purging the non-adsorbed precursor, pulsing a second precursor, purging the non-adsorbed precursor, and pulsing a oxidant to form an intermixed layer of two (or more) metal oxide dielectric dopant materials. The method may also be used to form a blocking layer between a bulk dielectric layer and a second electrode layer. The method improves the control of the composition and the control of the uniformity of the dopants throughout the thickness of the doped dielectric material.
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