Heat treatment apparatus, heat treatment method and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 8440941
APP PUB NO 20110070692A1
SERIAL NO

12888627

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Abstract

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Provided is a heat treatment apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and a heat treatment method using the heat treatment apparatus. The heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and the second chambers; a heating device; a gas introduction port; a gas exhaust port; and a jig for longitudinally fixing a substrate, in which the substrate is rapidly heated while the first and the second chambers are connected, and rapidly cooled by separating the chambers to move the substrate away from a heat storage portion of the heating device or the like. Further, the heat treatment method includes the heat treatment apparatus, and a method for manufacturing a semiconductor device using an oxide semiconductor is included.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moriwaka, Tomoaki Kanagawa, JP 86 900
Narita, Akihiro Kanagawa, JP 3 66
Ohnuma, Hideto Kanagawa, JP 272 8063
Yamazaki, Shunpei Tokyo, JP 7534 239327

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