Semiconductor device with gate stack structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8441079
APP PUB NO 20110186920A1
SERIAL NO

13043385

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
HYNIX SEMICONDUCTOR INC.KYOUNGKI-DO3939

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Heung-Jae Ichon-shi, KR 71 625
Kim, Tae-Kyung Ichon-shi, KR 132 436
Kim, Yong-Soo Ichon-do, KR 70 526
Lim, Kwan-Yong Ichon-shi, KR 105 551
Sung, Min-Gyu Ichon-shi, KR 36 199
Yang, Hong-Seon Ichon-shi, KR 31 171

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Nov 14, 2020
11.5 Year Payment $7400.00 $3700.00 $1850.00 Nov 14, 2024
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00