Importance

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Abstract

Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×10¹⁸ cm⁻³ or more and 1×10²⁰ cm⁻³ or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

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First Claim