High performance vertically emitting lasers
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United States of America Patent
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May 14, 2013
Grant Date -
Apr 8, 2004
app pub date -
Oct 3, 2002
filing date -
Oct 3, 2002
priority date (Note) -
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Abstract
A semiconductor laser that has a reflective surface. The reflective surface redirects the light of an edge emitting laser diode to emit from the top or bottom surface of the diode. The laser may include a gain layer and a feedback layer located within a semiconductive die. The gain and feedback layers generate a laser beam that travels parallel to the surface of the die. The reflective surface reflects the laser beam 90 degrees so that the beam emits the die from the top or bottom surface. The reflective surface can be formed by etching a vicinally oriented III-V semiconductive die so that the reflective surface extends along a (111)A crystalline plane of the die.
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