Electroplating methods and chemistries for deposition of group IIIA-group via thin films
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United States of America Patent
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May 21, 2013
Grant Date -
Aug 9, 2012
app pub date -
Nov 29, 2011
filing date -
May 19, 2008
priority date (Note) -
Expired
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Abstract
An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
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