Fabrication method of lithography mask and formation method of fine pattern using the same
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United States of America Patent
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May 21, 2013
Grant Date -
Jan 21, 2010
app pub date -
Dec 12, 2008
filing date -
Jul 16, 2008
priority date (Note) -
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Abstract
There is provided a method of fabricating a lithography mask, the method including: forming a transparent polymer layer on a surface of a first substrate where a convex-concave pattern is formed; separating the transparent polymer layer from the first substrate, the transparent polymer layer having a convex-concave surface formed by the convex-concave pattern of the first substrate transferred thereonto; depositing a metal thin film on the convex-concave surface; forming a viscous film on a second substrate; disposing the transparent polymer layer on the second substrate such that the viscous film and metal thin film are partially bonded together; and separating the transparent polymer layer from the second substrate such that a portion of the metal thin film bonded to the viscous film is removed, wherein a metal thin film pattern having the portion of the metal thin film removed therefrom is formed on the convex-concave surface.
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