Semiconductor device and method for manufacturing the same
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United States of America Patent
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May 21, 2013
Grant Date -
Feb 3, 2011
app pub date -
Jul 12, 2010
filing date -
Jul 29, 2009
priority date (Note) -
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Abstract
An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B<2A, given that the area of one of the electrode pads with which the probe for Kelvin contact comes into contact is B and the area of the other electrode pad with which the probe for two-terminal measurement comes into contact is A.
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