Methods of fabricating semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8445317
APP PUB NO 20110207303A1
SERIAL NO

13030454

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Abstract

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Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Kihyun Seongnam-si, KR 69 2761
Jeong, Jin Ha Yongin-si, KR 28 806
Kim, Jung-Ho Suwon-si, KR 147 1858
Son, Yong-Hoon Yongin-si, KR 124 3259

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