Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same
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United States of America Patent
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May 21, 2013
Grant Date -
Sep 1, 2011
app pub date -
Mar 23, 2011
filing date -
Jan 23, 2007
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Abstract
A phase change memory device including a phase change layer includes a storage node and a switching device. The switching device is connected to the storage node. The storage node includes a phase change layer selectively grown directly on a lower electrode. In a method of manufacturing a phase change memory device, an insulating interlayer is formed on a semiconductor substrate to cover a switching device. A lower electrode connected to the switching device is formed, and a phase change layer is selectively grown directly on the lower electrode.
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