Single crystal silicon rod fabrication methods and a single crystal silicon rod structure
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United States of America Patent
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May 21, 2013
Grant Date -
May 22, 2008
app pub date -
Oct 19, 2007
filing date -
Nov 17, 2006
priority date (Note) -
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Abstract
A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
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