Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
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United States of America Patent
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May 21, 2013
Grant Date -
May 26, 2011
app pub date -
Feb 2, 2011
filing date -
Jan 10, 2007
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Abstract
A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).
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