Methods of fabricating semiconductor devices including semiconductor layers formed in stacked insulating layers
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United States of America Patent
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May 21, 2013
Grant Date -
Aug 25, 2011
app pub date -
Feb 18, 2011
filing date -
Feb 22, 2010
priority date (Note) -
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Abstract
Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.
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