Methods for manufacturing a phase-change memory device
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United States of America Patent
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May 21, 2013
Grant Date -
Jun 7, 2012
app pub date -
Feb 8, 2012
filing date -
Sep 27, 2006
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Abstract
A method of manufacturing a phase-change memory device comprises forming a contact region on a substrate, forming a lower electrode electrically connected to the contact region, forming a phase-change material layer on the lower electrode using a chalcogenide compound target including carbon and metal, or carbon, nitrogen and metal, and forming an upper electrode on the phase-change material layer.
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