Oxide-nitride stack gate dielectric

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United States of America Patent

PATENT NO 8445381
APP PUB NO 20080093680A1
SERIAL NO

11961750

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Abstract

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A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
CYPRESS SEMICONDUCTOR CORPORATIONSAN JOSE, CA2020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Narayanan, Sundar Sunnyvale, US 24 113
Ramkumar, Krishnaswamy San Jose, US 127 1009

Cited Art Landscape

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* Cited By Examiner

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