Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element
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United States of America Patent
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May 21, 2013
Grant Date -
Mar 3, 2011
app pub date -
Aug 3, 2010
filing date -
Sep 1, 2009
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Abstract
Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor layer, a nitride semiconductor element and a nitride semiconductor light-emitting element each including the nitride semiconductor layer; and a method for manufacturing the nitride semiconductor element.
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