Fin transistor structure and method of fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 21, 2013
Grant Date -
Dec 29, 2011
app pub date -
Jun 24, 2010
filing date -
Dec 30, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein an insulation material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate, and a bulk semiconductor material is formed between remaining portions of the fin and the substrate. Thereby, it is possible to reduce the current leakage while maintaining the advantages such as low cost and high heat transfer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully