Discontinuous thin semiconductor wafer surface features
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United States of America Patent
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May 21, 2013
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app pub date -
May 7, 2009
filing date -
May 7, 2009
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Abstract
A semiconductor wafer has a semiconductor substrate and films on the substrate. The substrate and/or the films have at least one etch line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etch lines to prevent shorting of the layers.
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