Interconnect structures

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United States of America Patent

PATENT NO 8446012
APP PUB NO 20080277797A1
SERIAL NO

11747615

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor structure includes a first dielectric layer over a substrate. At least one first conductive structure is within the first dielectric layer. The first conductive structure includes a cap portion extending above a top surface of the first dielectric layer. At least one first dielectric spacer is on at least one sidewall of the cap portion of the first conductive structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Tien-I Hsin-Chu, TW 278 5423
Chen, Hai-Ching Hsinchu, TW 224 979
Yu, Chen-Hua Hsin-Chu, TW 2207 47923

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