Methods of optical proximity correction in manufacturing semiconductor devices
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United States of America Patent
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May 21, 2013
Grant Date -
Jul 14, 2011
app pub date -
Jan 11, 2010
filing date -
Jan 11, 2010
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Abstract
A method of optical proximity correction for a photolithographic progress in manufacturing semiconductor devices is disclosed. The method includes providing an illumination source in an optical system, dividing the illumination source into a number of segments in the form of concentric rings, and assigning a first intensity level to a first ring of a first radius and assigning a second intensity level to a second ring of a second radius, wherein the first intensity level is smaller than or equal to the second intensity level when the first radius is smaller than or equal to the second radius.
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