Nonvolatile memory device and related programming method

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United States of America Patent

PATENT NO 8446766
APP PUB NO 20130021847A1
SERIAL NO

13628244

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Abstract

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A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Myoung Gon Suwon-si, KR 7 577
Park, Ki Tae Seongnam-si, KR 115 1222

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