Methods for programming nonvolatile memory devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 21, 2013
Grant Date -
Aug 30, 2012
app pub date -
May 10, 2012
filing date -
Feb 6, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a method for programming a nonvolatile memory device. The nonvolatile memory device includes a local word line to divide a memory cell string into a first area including a selected word line and a second area not including the selected word line. In the method, word lines of the first area are driven by a first pass voltage and word lines of the second area driven by a second pass voltage higher than the first pass voltage. A cell transistor corresponding to the local word line is turned off after the first pass voltage and the second pass voltage are applied. The selected word line is driven by a program voltage after the cell transistor is turned off.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully