Methods of programming semiconductor memory devices
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United States of America Patent
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May 21, 2013
Grant Date -
May 5, 2011
app pub date -
Oct 15, 2010
filing date -
Nov 3, 2009
priority date (Note) -
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Abstract
To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.
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