Broad-area edge-emitting semiconductor laser with limited thermal contact
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United States of America Patent
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May 21, 2013
Grant Date -
Oct 18, 2012
app pub date -
Jun 27, 2012
filing date -
Mar 9, 2011
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Abstract
A diode-laser having an elongated diode-laser emitter is mounted on a relatively massive heat-sink. Two parallel grooves are machined into the heat-sink to leave a relatively narrow elongated ridge of the heat-sink between the grooves. The ridge has a width about equal to or narrower that the width of the emitter. The diode-laser is mounted on the heat-sink such that thermal communication between the emitter and heat-sink is essentially limited to thermal communication with the ridge.
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