Semiconductor laser device and manufacturing method thereof
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United States of America Patent
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May 21, 2013
Grant Date -
Aug 2, 2012
app pub date -
Jan 26, 2012
filing date -
Jan 27, 2011
priority date (Note) -
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Abstract
A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0≦x1≦1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0≦x2≦1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0≦x3≦1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4≦x2≦0.8.
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