Overwritable nonvolatile memory device and related data write method
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United States of America Patent
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May 21, 2013
Grant Date -
Jul 28, 2011
app pub date -
Jan 12, 2011
filing date -
Jan 25, 2010
priority date (Note) -
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Abstract
A nonvolatile memory device comprises overwritable memory cells. In an overwrite operation, data is read from a selected region of the nonvolatile memory device and combined with overwrite data to produce combined data. An error correction code is then generated for the combined data and the overwrite data and the error correction code are stored in the selected region.
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