Double patterning strategy for contact hole and trench in photolithography
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United States of America Patent
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May 28, 2013
Grant Date -
Feb 9, 2012
app pub date -
Oct 17, 2011
filing date -
Mar 12, 2008
priority date (Note) -
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Abstract
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.
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