Method for manufacturing photoelectric conversion device
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United States of America Patent
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May 28, 2013
Grant Date -
Mar 1, 2012
app pub date -
Apr 28, 2010
filing date -
Apr 30, 2009
priority date (Note) -
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Abstract
A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.
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