Method for stacked contact with low aspect ratio
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United States of America Patent
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May 28, 2013
Grant Date -
Apr 21, 2011
app pub date -
Dec 20, 2010
filing date -
Feb 13, 2007
priority date (Note) -
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Abstract
A method for an integrated circuit structure includes providing a semiconductor substrate; forming a metallization layer over the semiconductor substrate; forming a first dielectric layer between the semiconductor substrate and the metallization layer; forming a second dielectric layer between the semiconductor substrate and the metallization layer, wherein the second dielectric layer is over the first dielectric layer; and forming a contact plug with an upper portion substantially in the second dielectric layer and a lower portion substantially in the first dielectric layer. The contact plug is electrically connected to a metal line in the metallization layer. The contact plug is discontinuous at an interface between the upper portion and the lower portion.
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