Method of fabricating Al2O3 thin film layer
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United States of America Patent
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May 28, 2013
Grant Date -
Apr 4, 2013
app pub date -
Sep 29, 2011
filing date -
Sep 29, 2011
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Abstract
An Al2O3 thin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the Al2O3 thin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.
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