Low temperature p+ silicon junction material for a non-volatile memory device
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United States of America Patent
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May 28, 2013
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Nov 29, 2012
app pub date -
May 27, 2011
filing date -
May 27, 2011
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Abstract
A method for forming a non-volatile memory device includes forming a dielectric material overlying a semiconductor substrate, forming a first wiring structure overlying the first dielectric material, depositing an undoped amorphous silicon layer, depositing an aluminum layer over the amorphous silicon layer at a temperature of about 450 Degrees Celsius or lower, annealing the amorphous silicon and aluminum at a temperature of about 450 Degrees Celsius or lower to form a p+ polycrystalline layer, depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material, forming a second wiring structure comprising a metal material overlying the resistive switching material.
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