HVMOS devices and methods for forming the same
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United States of America Patent
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May 28, 2013
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app pub date -
Jan 16, 2012
filing date -
Jan 16, 2012
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Abstract
A device includes a first and a second HVMOS device, each includes a gate electrode over a semiconductor substrate, wherein the gate electrodes of the first and the second HVMOS devices have a first gate length and a second gate length, respectively, with the second gate length being greater than the first gate length. Each of the first and second HVMOS devices includes a first and a second well region of a p-type and an n-type, respectively, and a native region between and contacting the first and the second well regions. The first and the second well regions have higher impurity concentrations than the native region. The native region of the first HVMOS device and the native region of the second HVMOS device have a first native-region length and a second native-region length, respectively, wherein the second native-region length is greater than the first native-region length.
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