Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers
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United States of America Patent
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May 28, 2013
Grant Date -
Aug 18, 2011
app pub date -
Feb 16, 2010
filing date -
Feb 16, 2010
priority date (Note) -
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Abstract
This disclosure relates to a spacer structure of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate structure that has a sidewall overlying the substrate; a silicide region in the substrate on one side of the gate structure having an inner edge closest to the gate structure; a first oxygen-sealing layer adjoining the sidewall of the gate structure; an oxygen-containing layer adjoining the first oxygen-sealing layer on the sidewall and further including a portion extending over the substrate; and a second oxygen-sealing layer adjoining the oxygen-containing layer and extending over the portion of the oxygen-containing layer over the substrate, wherein an outer edge of the second oxygen-sealing layer is offset from the inner edge of the silicide region.
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