Method of fabricating epitaxial structures

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United States of America Patent

PATENT NO 8455290
APP PUB NO 20120058591A1
SERIAL NO

12807399

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Abstract

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A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

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Patent Owner(s)

Patent OwnerAddress
JPMORGAN CHASE BANK NATIONAL ASSOCIATION10 S DEARBORN ST FLOOR 07 ATTN AWRI MCKEE CHICAGO IL 60603

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Siskavich, Brad M Amherst, US 4 2548

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