Multiple-gate transistors with reverse T-shaped fins
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United States of America Patent
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Jun 4, 2013
Grant Date -
Mar 8, 2012
app pub date -
Nov 11, 2011
filing date -
Dec 29, 2008
priority date (Note) -
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Abstract
A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.
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