Layouts of POLY cut openings overlapping active regions
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United States of America Patent
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Jun 4, 2013
Grant Date -
Oct 11, 2012
app pub date -
Apr 6, 2011
filing date -
Apr 6, 2011
priority date (Note) -
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Abstract
A method of forming integrated circuits includes forming a mask layer over a gate electrode line, wherein the gate electrode line is over a well region of a semiconductor substrate; forming an opening in the mask layer, wherein a portion of the gate electrode line and a well pickup region of the well region are exposed through the opening; and removing the portion of the gate electrode line through the opening.
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