Nanoelectronic structure and method of producing such
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United States of America Patent
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Jun 4, 2013
Grant Date -
Dec 29, 2011
app pub date -
Sep 8, 2011
filing date -
Dec 22, 2006
priority date (Note) -
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Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
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