Reducing source/drain resistance of III-V based transistors
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United States of America Patent
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Jun 4, 2013
Grant Date -
Nov 4, 2010
app pub date -
Nov 10, 2009
filing date -
Apr 30, 2009
priority date (Note) -
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Abstract
An integrated circuit structure includes a substrate; a channel layer over the substrate, wherein the channel layer is formed of a first III-V compound semiconductor material; a highly doped semiconductor layer over the channel layer; a gate dielectric penetrating through and contacting a sidewall of the highly doped semiconductor layer; and a gate electrode on a bottom portion of the gate dielectric. The gate dielectric includes a sidewall portion on a sidewall of the gate electrode.
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